Crystalline phases of II-VI compound semiconductors grown by pulsed laser deposition
نویسندگان
چکیده
II-VI compound semiconductors, ZnS, ZnSe, CdS, CdSe, and CdTe, were grown epitaxially on ~111! and ~100! InP and GaAs substrates by excimer laser ablation. All of these films have good crystalline quality ~fully in-plane aligned! and mirror-like surface morphology. It was found that, on ~111!-oriented substrates, CdS and CdSe films were in the hexagonal phase with the c axis perpendicular to the surface, while ZnS and ZnSe films were in the cubic phase. The films grown on ~100!-oriented substrates were all cubic. These high quality films should be useful in optoelectronics applications. © 1994 American Institute of Physics.
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